Category: POWER ELECTRONICS

Q.106 Which of the following has highest forbidden energy gap?     A. Gallium arsenide     B. Germanium     C. Phosphorous     D. Silicon Ans.:  A Q.107 The voltage across diode carrying constant current is ____, as the temperature is increased. Read More …

Q.91 The number of minority charge carriers crossing the junction is mainly depend on _____ in PN junction diode.     A. rate of thermal generation of electron-hole pairs     B. reverse biased     C. forward biased     D. barrier potential Read More …

Q.76 In diode, practically no current flows and diode do not conduct till____     A. the barrier potential is overcome by internal voltage     B. the barrier potential is overcome by external voltage     C. the barrier potential is overcome Read More …

Q.61 Due to diffusion an electric current from p-side to the n-side is known as____     A. diffusion     B. drift current     C. diffusion current     D. concentration gradient Ans.: C Q.62 The drift current and diffusion current are____ Read More …

Q.46 In PN diode near the junction, the free electrons from n-region migrate towards p-region and the holes in p-region migrate towards n-region. This process is known as____     A. doping     B. diffusion     C. gradient     D. immobile Read More …

Q.31 In P-type semi conductor the Fermi level is_____     A. lies below the valence band     B. lies near to the valence band     C. lies above to the valence band     D. none of the above Ans.: B Read More …

Q.16 Pure form of Ge or Si is known as _____     A. an intrinsic semiconductors     B. an extrinsic semiconductors     C. trivalent     D. penta valent Ans.: A Q.17 Which of the following is charge carrier for conduction Read More …

Q.01 A material which has a resistance in between that an insulators and of a conductor is known as___     A. semiconductor materials     B. insulations     C. conductors     D. power electronics Ans.: A Q.02 which of the main Read More …