SEMICONDUCTOR MCQ_08


Q.106 Which of the following has highest forbidden energy gap?
    A. Gallium arsenide
    B. Germanium
    C. Phosphorous
    D. Silicon
Ans.:  A

Q.107 The voltage across diode carrying constant current is ____, as the temperature is increased.
    A. depends on doping concentration
    B. increases
    C. decreases
    D. remains same
Ans.: C

Q.108 Why silicon is preferred for manufacturing Zener diode?
    A. higher temperature
    B. higher current
    C. lower breakdown
    D. Both A and B
Ans.: D

Q.109 The following diode is used for voltage stabilization?
    A. Zener diode
    B. Tunnel diode
    C. P-N junction diode
    D. power diode
Ans.: B

Q.110 Full wave rectifier at least ___ diode is needed for construction.
    A. Two
    B. One
    C. four
    D. any of the above
Ans.: A

Q.111 Tunnel diode is made by _____ semiconductor.
    A. pure
    B. highly doped
    C. large forbidden gap type
    D. any of the above
Ans.: B

Q.112 The flow Current in a semiconductor is depends on the____.
    A. diffusion phenomenon
    B. recombination phenomenon
    C. drift phenomenon
    D. all of the above
Ans.: D

Q.113 Schottky diode is ____
    A. bipolar device
    B. unipolar device
    C. Tripolar device
    D. none of the above
Ans.: B

Q.114 Mobility of charge carrier is given by____
    A. E/v
    B. E/r
    C. v/E
    D. R/E
Ans.: C

Q.115 Light emitting diode produced light in ____
    A. forward biased
    B. reversed biased
    C. In both reversed and forward biased
    D. at absolute zero temperature
Ans.: A

Q.116 The barrier offers opposition to _____ in semiconductor.
    A. free electrons
    B. holes
    C. minority carriers both sides
    D. majority carriers in both sides
Ans.: D

Q.117 Under which conditions avalanche breakdown occurs in semiconductor diode?
    A. when reversed potential barrier is exceeds certain limit
    B. when forward potential barrier is exceeds certain limit
    C. when potential barrier reduced to zero
    D. when forward potential barrier is exceeds breakdown value
Ans.: A

Q.118 ______ correlates electrical and thermal conductivities
    A. Wiedemann-Frans law
    Ampere’s circuital law
    C. Fleming’s left hand rule
    D. Joule’s law
Ans.: A

Q.119 Diffusion current in a diode is caused by_____
    A. crystal formation
    B. drift current
    C. chemical equivalent
    D. temperature rise
Ans.: A

Q.120 Which of the following diode is invariably used with reverse biased?
    A. PN junction diode
    B. Tunnel diode
    C. Zener diode
    D. Schottky diode
Ans.: C

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